型号/品牌/封装
品类/描述
库存
价格(含税)
资料
-
描述:
RF Power Transistor,1880 to 2025MHz, 140W, Typ Gain in dB is 16 @ 1920MHz, 28V, LDMOS, SOT1827
3168
-
描述:
Trans RF MOSFET N-CH 7V 0.04A 4Pin(3+Tab) SOT-143B T/R
1081
-
描述:
MOSFET N-CH RF 28V 40W NI780HS-4
5652
-
描述:
RF Power Transistor,1.8 to 2000MHz, 100W, Typ Gain in dB is 27.2 @ 512MHz, 50V, LDMOS, SOT1826
9836
-
描述:
RF Power Transistor,1.8 to 600MHz, 300W, Typ Gain in dB is 25 @ 230MHz, 50V, LDMOS, SOT1736
1402
-
描述:
RF Power Transistor,1.8 to 2000MHz, 25W, Typ Gain in dB is 25.9 @ 512MHz, 50V, LDMOS, SOT1791
5600
-
描述:
RF Power Transistor,1.8 to 600MHz, 300W, Typ Gain in dB is 25 @ 130MHz, 50V, LDMOS, SOT1826
7840
-
描述:
RF Power Transistor,1.8 to 600MHz, 150W, Typ Gain in dB is 26.3 @ 230MHz, 50V, LDMOS, SOT1736
5153
-
描述:
RF Power Transistor,1 to 2700MHz, 125W, Typ Gain in dB is 16 @ 2500MHz, 50V, GaN, SOT1791
2702
-
描述:
RF Power Transistor,1200 to 1400MHz, 330W, Typ Gain in dB is 18 @ 1400MHz, 50V, LDMOS, SOT1793
4400
-
描述:
RF MOSFET Transistors MOSFET 10-500MHz 1000W 50V
7501
-
描述:
Trans RF MOSFET N-CH 65V 5Pin TO-272W T/R
3503
-
描述:
LTE Lateral N-Channel RF Power MOSFET, 2300-2400MHz, 28W Avg., 28V
5564
-
描述:
射频金属氧化物半导体场效应(RF MOSFET)晶体管 3600MHZ 8W 30V
1796
-
描述:
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1990MHZ 29W
7603
-
描述:
RF Power Transistor,728 to 768MHz, 125W, Typ Gain in dB is 19.2 @ 768MHz, 28V, LDMOS, SOT1823
1896
-
描述:
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880MHz, 74W Avg., 30V
4919
-
描述:
RF Power Transistor,2300 to 2400MHz, 150W, Typ Gain in dB is 14.1 @ 2320MHz, 28V, LDMOS, SOT1826
1535
-
描述:
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880MHz, 72W CW, 28V
2677
-
描述:
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
2146
-
描述:
RF Power Transistor,790 to 820MHz, 340W, Typ Gain in dB is 20.9 @ 820MHz, 28V, LDMOS, SOT1787
4025
-
描述:
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025MHz, 37W Avg., 28V
5687
-
描述:
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025MHz, 10W Avg., 32V
3160
-
描述:
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400MHz, 30W Avg., 28V
3732
-
描述:
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960MHz, 75W Avg., 28V
3449
-
描述:
Lateral N-Channel Broadband RF Power MOSFET, 965-1215MHz, 1000W, 50V
6270
-
描述:
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960MHz, 72W CW, 28V
6821
-
描述:
Trans RF MOSFET N-CH 65V 3Pin NI-880S T/R
2247
-
描述:
RF Power Transistor,1.8 to 600MHz, 300W, Typ Gain in dB is 25 @ 230MHz, 50V, LDMOS, SOT1736
2683
-
描述:
Trans RF MOSFET N-CH 65V 3Pin NI-400 T/R
7735
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